1982

• Obtaining the Specific Contact Resistance from Transmission Line Model Measurements

1989

• Importance of Source and Drain Resistance to the Maximum fT of Millimeter-Wave MODFET's

1996

• CW Operation of Short-Channel GaN/AlGaN Doped Channel Heterostructure Field Effect Transistors at 10 GHz and 15 GHz
• Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors
• Measured microwave power performance of AlGaN/GaN MODFET

1997

• 0.12-um gate III-V Nitride HFET's with high contact resistance
• Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100V
• Microwave Performance of AlGaN/GaN Inverted MODFETs
• High-temperature performance of AlGaN/GaN HFET's on SiC substrates
• high voltage double implanted power MOSFETs in 6H-SiC

1998

• High-power microwave 0.25-um gate doped-channel GaN/AlGaN heterostructure field effect transistor
• DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates
• High Al-content AlGaN/GaN MODFET's for ultrahigh performance
• Self-Heating in High Power AlGaN/GaN HFETs
• Low-frequency noise in AlGaN/GaN Heterostructure Field Effect Transistors
• high-voltage (2. 6 kV) lateral MOSFETs in 4H-SiC
• design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers

1999

• High-Power Microwave GaN/AlGaN HEMT‘s on Semi-Insulating Silicon Carbide Substrates
• GaN HBTs,

last updated Thursday, February 14, 2002 1:47:20 PM.
© 2001 The Materials Research Society