Data for reference kuball-ieeeedl-23-7

Measurement of temperature in high-power AlGaN/GaN HFETs using Raman scattering

M. Kuball, J. M. Hayes, M. J. Uren, T. Martin, J. C. H. Birbeck, R. S. Balmer, B. T. Hughes

IEEE Electron Device Letters 23(1), 7 (2002).

This item is cited by the following items in the database:

  1. The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs

Contributed by A submitted manuscript, on Tuesday, May 27, 2003 2:49:21 PM

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