Data for reference wu-ieeeedl-48-586

Very-high power density AlGaN/GaN HEMTs

Y-F. Wu, D. Kapolnet, J. P. Ibbetson, P. Parikh, B. P. Keller, U. K. Mishra

IEEE Electron Device Letters 48, 586 (2001).

This item is cited by the following items in the database:

  1. Growth of Semi-insulating GaN Layer by Controlling Size of Nucleation Sites for SAW Device Applications

Contributed by A submitted manuscript, on Wednesday, August 13, 2003 4:39:25 PM

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