Data for reference sheppard-ieeeedl-20-161

High-Power Microwave GaN/AlGaN HEMT‘s on Semi-Insulating Silicon Carbide Substrates

S. T. Sheppard, K. Doverspike, W. L. Pribble, S. T. Allen, J. W. Palmour, L. T. Kehias, T. J. Jenkins

IEEE Electron Device Letters 20(4), 161 (1999).

This item is cited by the following items in the database:

  1. Current limitation after pinch-off in AlGaN/GaN FETs

Contributed by A submitted manuscript, on Tuesday, March 21, 2000 2:05:16 PM

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