Data for reference shoen-ieeeedl-45-1595

design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers

K. J. Shoen, J. M. Woodall, J. A. Cooper, M. R. Melloch

IEEE Electron Device Letters 45, 1595 (1998).

This item is cited by the following items in the database:

  1. Growth and Device Performance of GaN Schottky Rectifiers

Contributed by A submitted manuscript, on Thursday, June 24, 1999 5:00:37 PM

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