gaska-ieeeedl-19-89

Data for reference gaska-ieeeedl-19-89

Self-Heating in High Power AlGaN/GaN HFETs

R. Gaska, A. Osinsky, J. W. Yang, M. S. Shur

IEEE Electron Device Letters 19(3), 89 (1998).

Self-heating effects in AlGaN-GaN Heterostructure Field Effect Transistors (HFETs) grown on sapphire and SiC substrates are compared. Heat dissipation strongly affects the device characteristics soon after the application of the source-drain voltage (in less than 10^-7 s). The obtained results show that in HFETs with the total epilayer thickness less than 1.5 micron, the thermal impedance is primarily determined by the substrate material and not by the material of the active layer. For our devices grown on 6H-SiC substrates, we measured thermal impedance of approximately 2 ^oC×mm/W, which was more than an order of magnitude smaller than 25 ^oC×mm/W measured for similar AlGaN/GaN HFETs grown on sapphire. The results demonstrate that AlGaN-GaN HFETs grown on SiC substrates combine advantages of superior electron transport properties in AlGaN/GaN heterostructures with excellent thermal properties of SiC, which should make these devices suitable for high power electronic applications.

This item is cited by the following items in the database:

The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs

Contributed by Remis Gaska from remis.apaoptics.com. on Friday, December 18, 1998 4:08:31 PM

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