ping-ieeeedl-19-54

Data for reference ping-ieeeedl-19-54

DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates

A.T. Ping, Q. Chen, J.W. Yang, M. Asif Khan, I. Adesida

IEEE Electron Device Letters 19(2), 54 (1998).

HFETs of 0.25, 0.5, and 1.0 um gate lengths fabricated. Peak drain current of 1.43 A/mm, max. extrinsic transconductance of 229 mS/mm, ft of 53 GHz, and fmax of 58 GHz were achieved with of 0.25 um gate length devices.

Contributed by A. T. Ping from escobar.ccsm.uiuc.edu. on January 24, 1998 3:21:56 PM

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