wu-ieeeedl-19-50

Data for reference wu-ieeeedl-19-50

High Al-content AlGaN/GaN MODFET's for ultrahigh performance

Y.-F. Wu, B.P. Keller, P. Fini, S. Keller, T.J. Jenkins, L.T. Kehias, S.P. Denbaars, U.K. Mishra

IEEE Electron Device Letters 19(2), 50 (1998).

Al0.5Ga0.5N/GaN MODFETs were fabricated which exhibited current density of 1 A/mm and three- terminal breakdown voltages up to 200 V. CW power densities of 2.84 and 2.57 W/mm were achieved at 8 and 10 GHz, respectively.

Contributed by A. T. Ping from escobar.ccsm.uiuc.edu. on January 24, 1998 3:29:56 PM

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