Data for reference balandin-ieeeedl-19-475

Flicker noise in GaN/AlGaN doped channel heterostructure field effect transistors,

A. Balandin, S. Cai, R. Li, K. L. Wang, V. R. Rao, C. R. Viswanathan

IEEE Electron Device Letters 19, 475 (1998).

This item is cited by the following items in the database:

  1. The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs

Contributed by A submitted manuscript, on Tuesday, May 27, 2003 2:41:47 PM

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