Data for reference chen-ieeeedl-19-44

High-power microwave 0.25-um gate doped-channel GaN/AlGaN heterostructure field effect transistor

Q. Chen, J.W. Yang, R. Gaska, M. Asif Khan, M.S. Shur, G.J. Sullivan, A.L. Sailor, J.A. Higgings, A.T. Ping, I. Adesida

IEEE Electron Device Letters 19(2), 44 (1998).

Power density of 1.73 W/mm at 8.4 GHz.

This item is cited by the following items in the database:

  1. Nucleation of AlN on the (7×7) Reconstructed Silicon (1 1 1) Surface

Contributed by A. T. Ping from escobar.ccsm.uiuc.edu. on January 24, 1998 3:17:55 PM

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