kuksenkov-ieeeedl-19-222

Data for reference kuksenkov-ieeeedl-19-222

Low-frequency noise in AlGaN/GaN Heterostructure Field Effect Transistors

D. V. Kuksenkov, H. Temkin, R. Gaska, J. W. Yang

IEEE Electron Device Letters 19(7), 222 (1998).

We report low-frequency noise characteristics of doped-channel GaN/AlGaN heterostructure field-effect transistors grown on sapphire substrates. In the frequency range 1Hz-100kHz the observed noise is of the 1/f character. The Hooge constant is of the order of 10^-2 and is linearly proportional to the channel width. We believe that the noise originates mainly from the fluctuation of the number of carriers in the channel caused by a high density of defects at the GaN/AlGaN heterointerface

Contributed by Remis Gaska from remis.apaoptics.com. on Friday, December 18, 1998 4:37:11 PM

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