Data for reference spitz-ieeeedl-19-100

high-voltage (2. 6 kV) lateral MOSFETs in 4H-SiC

J. Spitz, M. R. Melloch, J. A. Cooper, M. A. Capano

IEEE Electron Device Letters 19, 100 (1998).

This item is cited by the following items in the database:

  1. Growth and Device Performance of GaN Schottky Rectifiers

Contributed by A submitted manuscript, on Thursday, June 24, 1999 5:00:48 PM

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