Data for reference shenoy-ieeeedl-18-93

high voltage double implanted power MOSFETs in 6H-SiC

J. N. Shenoy, M. R. Melloch, J. A. Cooper

IEEE Electron Device Letters 18, 93 (1997).

This item is cited by the following items in the database:

  1. Growth and Device Performance of GaN Schottky Rectifiers

Contributed by A submitted manuscript, on Thursday, June 24, 1999 5:00:26 PM

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