Data for reference gaska-ieeeedl-18-492High-temperature performance of AlGaN/GaN HFET's on SiC substrates
R. Gaska, Q. Chen, J. Yang, A. Osinsky, M. Asif Khan, M.S. Shur
IEEE Electron Device Letters 18(10), 492 (1997).
HFETs with gate lengths of 1.5 um, drain-source spacing of 5 um
gmext = 142 mS/mm, max drain saturation current = 0.95 A/mm.
Device demonstrated stable performance up to 250 C.
Contributed by A. T. Ping from escobar.ccsm.uiuc.edu. on September 30, 1997 2:04:35 PM
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