Data for reference aktas-ieeeedl-18-293

Microwave Performance of AlGaN/GaN Inverted MODFETs

O. Aktas, Z.F. Fan, A. Botchkarev, S.N. Mohammad, M. Roth, T. Jenkins, L. Kehias, H. Morkoc

IEEE Electron Device Letters 18(6), 293 (1997).

CW output power of 1.5 W/mm, PAE of 17.5% at 4 GHz for 2 um gate-length inverted AlGaN/GaN MODFET. ft = 6 GHz and fmax = 11 GHz.

This item is cited by the following items in the database:

  1. The Polarity of GaN: a Critical Review

Contributed by A. T. Ping from escobar.ccsm.uiuc.edu. on Tuesday, July 15, 1997 3:04:50 PM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Wednesday, April 27, 2005 4:43:39 PM.
© 1998 The Materials Research Society