Data for reference burm-ieeeedl-18-141

0.12-um gate III-V Nitride HFET's with high contact resistance

J. Burm, K. Chu, W.J. Schaff, L.F. Eastman, M.Asif Khan, Q. Chen, J.W. Yang, M.S. Shur

IEEE Electron Device Letters 18(4), 141 (1997).

0.12 um gate length AlGaN/GaN HFET, ft = 46.9 GHz, fmax = 103 GHz

This item is cited by the following items in the database:

  1. High Frequency AlGaN/GaN MODFET's
  2. Nucleation of AlN on the (7×7) Reconstructed Silicon (1 1 1) Surface

Contributed by A. T. Ping from escobar.ccsm.uiuc.edu. on Wednesday, May 28, 1997 12:51:33 AM

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