Data for reference wu-ieeeedl-17-455

Measured microwave power performance of AlGaN/GaN MODFET

Y. -F. Wu, B. P. Keller, S. Keller, D. Kapolnek, S. P. DenBaars, U. K. Mishra

IEEE Electron Device Letters 17, 455 (1996).

1 um gate length AlGaN/MODFETs: At 2 GHz, a output power density of 1.1 W/mm and power added efficiency of 18.6% was obtained.

This item is cited by the following items in the database:

  1. On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect

Contributed by A submitted manuscript, on Friday, August 28, 1998 6:10:30 PM

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