Data for reference higgins-ieeeedl-17-325Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors
M. Asif Khan, Q. Chen, J.W. Yang, M.S. Shur, B.T. Dermott, and J.A. Higgins
IEEE Electron Device Letters 17(7), 325 (1996).
1 um gate length AlGaN/GaN doped channel HFETs with ft = 18.3 GHz
Contributed by A. T. Ping from escobar.ccsm.uiuc.edu. on Monday, March 3, 1997 4:33:36 PM
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