Data for reference farahmand-ieeeed-48-535

Monte Carlo simulation of electron transport in the III-nitride wurtzite phase material system: binaries and ternaries

M. Farahmand

IEEE Transactions on Electron Devices 48(3), 535 (2001).

_Ref52718785

This item is cited by the following items in the database:

  1. The Ambient Temperature Effect on Current-Voltage Characteristics of Surface-Passivated GaN-Based Field-Effect Transistors

Contributed by A submitted manuscript, on Monday, November 15, 2004 11:50:25 AM

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