Data for reference weitzel-ieeeed-43-1732

SiC high power devices

C. E. Weitzel, J. W. Palmour, C. H. Carter, K. Moore, K. J. Nordquist, S. Allen, C. Thero, M. Bhatnagar

IEEE Transactions on Electron Devices 43, 1732 (1996).

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This item is cited by the following items in the database:

  1. Growth and Device Performance of GaN Schottky Rectifiers

Contributed by A submitted manuscript, on Thursday, June 24, 1999 4:59:10 PM

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