Data for reference yoder-ieeeed-43-1633

Wide Bandgap Semiconductor Materials and Devices

M. N. Yoder

IEEE Transactions on Electron Devices 43, 1633 (1996).

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This item is cited by the following items in the database:

  1. 300°ree;C GaN/AlGaN Heterojunction Bipolar Transistor

Contributed by A submitted manuscript, on Wednesday, October 21, 1998 11:48:00 AM

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