Data for reference bhatnagar-ieeeed-40-645

comparison of 6H-SiC, 3C-SiC and Si for power devices

M. Bhatnagar, B. J. Baliga

IEEE Transactions on Electron Devices 40, 645 (1993).

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  1. Growth and Device Performance of GaN Schottky Rectifiers

Contributed by A submitted manuscript, on Thursday, June 24, 1999 5:00:13 PM

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