Data for reference canali-ieeeed-ed22-1045

Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature.

C. Canali, G. Majni, R. Minder, G. Ottaviani

IEEE Transactions on Electron Devices ED22(7), 1045 (1975).

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This item is cited by the following items in the database:

  1. The Ambient Temperature Effect on Current-Voltage Characteristics of Surface-Passivated GaN-Based Field-Effect Transistors

Contributed by A submitted manuscript, on Friday, November 19, 2004 4:02:37 PM

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