Data for reference rutz-ibmjrd-17-61

An AlN switchable memory resistor capable of a 20-MHz cycling rate and 500-picosecond switching time

R. F. Rutz, E. P. Harris, J. J. Cuomo

IBM J. Res. Dev. 17, 61 (1973).

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This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review

Contributed by S. Strite

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