1984

• Electron mobility in indium nitride

1995

• AlN GaN Quarter Wave Reflector Stack Grown by Gas Source MBE on (100)GaAs
• Hydrogen incorporation in GaN, AIN, and InN during Cl2/CH4/H2/Ar ECR plasma etching

1994

• Current Voltage Characteristic Collapse in Algan/GaN Heterostructure Insulated Gate Field Effect Transistors at High Drain Bias
• Reactive Ion Etching of Gallium Nitride Using Hydrogen Bromide Plasmas
• Ecr Plasma Etching of GaN, AlN and Inn Using Iodine or Bromine Chemistries

1995

• High quality GaN growth at high growth rates by gas-source molecular beam epitaxy

1996

• Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 cutoff frequency,

1994

• Electrical characterisation of Ti Schottky barriers on n-type GaN,

1996

• Refractive Index of AlGaInN Alloys
• Characterization of Pd Schottky barrier on n-type GaN
• High temperature characteristics of Pd Schottky contacts on n-type GaN

1997

• Effects of annealing on Ti Schottky barriers on n-type GaN

1996

• Blue and green electroluminescence from MBE grown GaN/InGaN heterostructures

1997

• GaN/AlGaN MODFET with 80 GHz fmax and >100V gate-drain breakdown voltage

1996

• Shortest wavelength semiconductor laser diode

1997

• Microwave Performance of 0.25um doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures
• 8 x 8 GaN Schottky barrier photodiode array for visible-blind imaging
• Piezoelectric charge densities in AlGaN/GaN HFETs
• Effects of proton irradiation on AlGaN/InGaN/GaN green light emitting diodes
• AlGaN-GaN heterostructure FETs with offset gate design
• Dependence of DC and RF characteristics on gate length for high current AlGaN/GaN HFETs
• Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC
• High transconductance AlGaN/GaN heterostructure field effect transistors on SiC substrates

1998

• Optically Pumped InGaN/GaN Double Heterostructure Lasers with Cleaved Facets

1997

• Short-channel Al_{0. 5}Ga_{0. 5}N/GaN MODFETs with power density > 3W/mm at 18Ghz

1998

• Impact Ionization in AlGaN-GaN Heterostructure Field effect Transistors on Sapphire Substrates
• Avalanche Breakdown and Breakdown Luminescence in p-p-n GaN Diodes
• Room-Temperature Continuous-Wave Operation of InGaN/GaN Multiquantum Well Laser Diode

1999

• 1. 3 μm continuous-wave operation of GaInNAs lasers grown by metal organic chemical vapour deposition
• 1. 29 μm GaInNAs multiple quantum-well ridge-waveguide laser diodes with improved performance

1996

• ICP Etching of GaN,

2000

• GaInAsN/GaAs laser diodes operating at 1. 52 μm

last updated Thursday, February 14, 2002 1:46:51 PM.
© 2001 The Materials Research Society