turin-electronlett-40-81

Data for reference turin-electronlett-40-81

Performance degradation of GaN field-effect transistors due to thermal boundary resistance at GaN/substrate interface,

V. O. Turin, A. A. Balandin

Electronics Letters 40(1), 81 (2004).

_Ref70499972

This item is cited by the following items in the database:

The Ambient Temperature Effect on Current-Voltage Characteristics of Surface-Passivated GaN-Based Field-Effect Transistors

Contributed by A submitted manuscript, on Friday, September 10, 2004 2:41:56 PM

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