Data for reference youn-electronlett-39-566

High power 0. 25 μm-gate GaN HEMTs on sapphire with power density 4. 2 W/mm at 10 GHz

D. -H. Youn, V. Kumar, J. -H. Lee, R. Schwindt, W. -J. Chang, J. -Y. Hong, C. -M. Jeon, S. -B. Bae, K. -S. Lee, J. -L. Lee, J. -H. Lee, I. Adesida

Electronics Letters 39, 566 (2003).

This item is cited by the following items in the database:

  1. Growth of Semi-insulating GaN Layer by Controlling Size of Nucleation Sites for SAW Device Applications

Contributed by A submitted manuscript, on Wednesday, August 13, 2003 4:39:43 PM

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