gao-electronlett-39-1

Data for reference gao-electronlett-39-1

AlGaN/GaN current aperture vertical electron transistors fabricated by photoelectrochemical wet etching

Y. Gao, Ar. R. Stonas, I. Ben-Yaacov, U. Mishra, S. P. DenBaars, E. L. Hu

Electronics Letters 39, 1 (2003).

This item is cited by the following items in the database:

Selective Etching of GaN from AlGaN/GaN and AlN/GaN Structures

Contributed by A submitted manuscript, on Friday, July 16, 2004 3:58:21 PM

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