Data for reference balandin-electronlett-36-912

Gate-voltage dependence of low-frequency noise in GaN/AlGaN heterostructure field-effect transistors,

A. Balandin

Electronics Letters 36(10), 912 (2000).

This item is cited by the following items in the database:

  1. The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs
  2. The Ambient Temperature Effect on Current-Voltage Characteristics of Surface-Passivated GaN-Based Field-Effect Transistors

Contributed by A submitted manuscript, on Tuesday, May 27, 2003 2:41:38 PM

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