osinsky-electronlett-34-691

Data for reference osinsky-electronlett-34-691

Avalanche Breakdown and Breakdown Luminescence in p-p-n GaN Diodes

A. Osinsky, M. S. Shur, R. Gaska, Q. Chen

Electronics Letters 34(7), 691 (1998).

We report on the observation of the electric breakdown in graded p-p-n GaN photodiodes. The breakdown is accompanied by microplasma formation. The photocurrent strongly increases at the breakdown voltages demonstrating a potential of using these devices as Avalanche Photo Diodes (APDs)

Contributed by Remis Gaska from remis.apaoptics.com. on Friday, December 18, 1998 4:57:03 PM

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