Data for reference stocker-electronlett-34-373

Optically Pumped InGaN/GaN Double Heterostructure Lasers with Cleaved Facets

D. Stocker, E. F. Schubert, K. S. Boutros, J. S. Flynn, R. P. Vaudo, V. M. Phanse, J. M. Redwing

Electronics Letters 34(4), 373 (1998).

Optically pumped laser action is demonstrated in an InGaN/GaN double heterostructure with a 1000Å thick InGaN active region. Hydride vapor phase epitaxy (HVPE) is used to grow a 10 µm thick GaN buffer layer on (0001) sapphire, and the GaN/InGaN GaN double heterostructure is subsequently grown by MOVPE 1 mm long cavities are produced by cleaving the structure along the (10-10) plane of sapphire. Optical pumping at room temperature yields an incident threshold power density of 1.3MW/cm2. Above threshold the differential quantum efficiency increases by a factor of 34, the emission linewidth decreases to 13.5 meV and the output becomes highly TE polarized.

This item cites the following items in the database:

  1. Excitation of a higher order transverse mode in an optically pumped In0.15Ga0.85N/In0.05Ga0.95N multiquantum well laser structure
  2. Cleaved cavity optically pumped InGaN(en-dash) GaN laser grown on spinel substrates
  3. Ridge-geometry InGaN MQW structure laser diodes
  4. Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser dides with lifetimes of 27 hours

Contributed by E. S. Hellman from freeport.proxy.lucent.com. on Tuesday, March 24, 1998 3:35:26 PM

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