dyakonova-electronlett-34-1699

Data for reference dyakonova-electronlett-34-1699

Impact Ionization in AlGaN-GaN Heterostructure Field effect Transistors on Sapphire Substrates

N. Dyakonova, A. Dickens, M. S. Shur, R. Gaska

Electronics Letters 34(17), 1699 (1998).

We report on the impact ionization in AlGaN-GaN Heterostructure Field Effect Transistors grown on sapphire substrates. The measured characteristic electric field of the impact ionization is approximately 2.8-3.15 MV/cm at room temperature. This result is in a good agreement with the theoretical predictions for the breakdown field in GaN and with our recent results for AlGaN-GaN HFETs on 6H-SiC substrates

Contributed by Remis Gaska from remis.apaoptics.com. on Friday, December 18, 1998 4:47:01 PM

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