Data for reference kobayashi-electronlett-34-1494

Room-Temperature Continuous-Wave Operation of InGaN/GaN Multiquantum Well Laser Diode

T. Kobayashi, F. Nakamura, K. Nagahama, T. Tojyo, H. Nakajima, T. Asatsuma, H. Kawai, M. Ikeda

Electronics Letters 34, 1494 (1998).

This item is cited by the following items in the database:

  1. Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System

Contributed by A submitted manuscript, on Tuesday, January 19, 1999 11:23:49 AM

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