hirsch-electronlett-33-95

Data for reference hirsch-electronlett-33-95

Effects of annealing on Ti Schottky barriers on n-type GaN

MT Hirsch, KJ Duxstad, EE Haller

Electronics Letters 33(1), 95 (1997).

The authors investigate the Scottky barrier heights of Ti films deposited on n-type GaN. The effective barrier height phib0 is measured by current-voltage measurements against temperature. An increasing barrier height phib0 from ~ 200 meV (as deposited) to 250 meV after annealing at temperatures as low as 60C is observed. After annealing at 230C and above, a stable phib0 of 450 meV is measureed. The increase in phib0 is not due to any macroscopic interfacial reaction.

Contributed by Xiuling Li from cowboy.ccsm.uiuc.edu. on Friday, February 7, 1997 12:38:29 PM

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