Data for reference chen-electronlett-33-637Microwave Performance of 0.25um doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures
Q Chen, R Gaska, MA Khan, MS Shur, A Ping, I Adesida, J Burm, WJ Schaff, LF Eastman
Electronics Letters 33(7), 637 (1997).
Contributed by Xiuling Li from 128.174.97.44 on Tuesday, May 13, 1997 5:28:06 PM
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