Data for reference nguyen-electronlett-33-334

GaN/AlGaN MODFET with 80 GHz fmax and >100V gate-drain breakdown voltage

NX Nguyen, BP Keller, S Keller, YF Wu, M Le, C Nguyen, SP Denbaars, UK Mishra, D Grider

Electronics Letters 33(4), 334 (1997).

This item is cited by the following items in the database:

  1. Implantation Activation Annealing of Si-Implanted Gallium Nitride at Temperatures >1100°ree;C

Contributed by Xiuling Li from cowboy.ccsm.uiuc.edu. on Tuesday, March 4, 1997 12:53:15 PM

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