wu-electronlett-33-1742

Data for reference wu-electronlett-33-1742

Short-channel Al_{0. 5}Ga_{0. 5}N/GaN MODFETs with power density > 3W/mm at 18Ghz

Y. F. Wu, B. P. Keller, P. Fini, J. Pusl, M. Le, N. X. Nguyen, C. Nguyen, D. Widman, S. Keller, S. P. Denbaars, U. K. Mishra UK

Electronics Letters 33(20), 1742 (1997).

The authors have demonstrated 0. 25 µm gate-length Al_{0. 5}Ga_{0. 5}N/GaN MODFETs on sapphire substrates which exhibit CW output power densities > 3W/mm at 18 GHz, the highest reported to date for microwave FETs in the K band. This confirms the promise of the high Al-content AlGaN/GaN MODFET structure.

This item is cited by the following items in the database:

Nucleation of AlN on the (7×7) Reconstructed Silicon (1 1 1) Surface

Contributed by A submitted manuscript, on Friday, July 31, 1998 12:43:17 AM

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Short-channel Al0. 5Ga0. 5N/GaN MODFETs with power density > 3W/mm at 18Ghz

Short-channel Al_{0. 5}Ga_{0. 5}N/GaN MODFETs with power density > 3W/mm at 18Ghz