Data for reference bulman-electronlett-33-1556

Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC

G.E. Bulman, K. Doverspike, S.T. Sheppard, T.W. Weeks, H.S. Kong, H.M. Dieringer, J.A. Edmond, J.D. Brown, J.T. Swindell, J.F. Schetzina

Electronics Letters 33(18), 1556 (1997).

First GaN/SiC laser paper.

This item cites the following items in the database:

  1. The Blue Laser Diode - GaN based Light Emitters and Lasers
  2. Shortest wavelength semiconductor laser diode
  3. Room Temperature pulsed operation of nitride based MQW laser diodes with cleaved facets on conventional c-face sapphire substrates
  4. Subband emissions from InGaN multi-quantum-well laser diodes under room-temperature continous wave operation

This item is cited by the following items in the database:

  1. Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD
  2. GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
  3. Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence
  4. Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
  5. Visible-Blind UV Digital Camera Based On a 32 x 32 Array of GaN/AlGaN p-i-n Photodiodes
  6. UV-Specific (320-365 nm) Digital Camera Based On a 128x128 Focal Plane Array of GaN/AlGaN p-i-n Photodiodes

Contributed by S. Strite from internet-gateway-x.zurich.ibm.com. on September 4, 1997 11:19:45 AM

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