Data for reference chen-electronlett-33-1413High transconductance AlGaN/GaN heterostructure field effect transistors on SiC substrates
Q. Chen, J.W. Yang, M. Asif Khan, A.T. Ping, I. Adesida
Electronics Letters 33(16), 1413 (1997).
HFETs with 0.25 um gate length and 2 um drain-source spacing.
Maximum drain saturation current of 1.71 A/mm and gmext of 222 mS/mm.
Contributed by A. T. Ping from escobar.ccsm.uiuc.edu. on September 30, 1997 2:13:00 PM
If you are a registered user, and would like to help the journal improve
its references database, you can help by adding data to the database. The author list may be incomplete; the abstract
or title may be missing, and the list of references cited by the article is probably absent or incomplete.
last updated Wednesday, April 27, 2005 7:34:37 PM.
© 1998 The Materials Research Society