Data for reference osinski-electronlett-33-1252

Effects of proton irradiation on AlGaN/InGaN/GaN green light emitting diodes

M. Osinski, P. Perlin, H. Schöne, A.H. Paxton, E.W. Taylor

Electronics Letters 33(14), 1252 (1997).

Influence of proton irradiation on properties of Nichia single-quantum-well AlGaN/InGaN/GaN green-light emitting diodes is studied for the first time. A dose of 2.3 Mrad of protons produced by a nuclear microprobe degraded the room-temperature light emission from the irradiated area of the device, while the electrical device characteristics remained practically unchanged. At low temperatures (~ 15 K), the light emission recovers almost entirely, thus indicating the formation of a non-radiative recombination channel within the active region.

This item cites the following items in the database:

  1. Superbright Green InGaN Single-Quantum-Well-Structure Light-Enmitting Diodes
  2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
  3. Degradation mechanisms in AlGaN/InGaN/GaN light sources
  4. Low-temperature study of current and electroluminescence in InGaN/AlGaN/GaN double- heterostructure blue light-emitting diodes
  5. Optical and electrical characteristics of single-quantum-well InGaN light emitting diodes

Contributed by S. Strite from internet-gateway-x.zurich.ibm.com. on Tuesday, July 8, 1997 9:00:53 AM
Modified by M. Osinski from sakai24.svbl.tokushima-u.ac.jp. on November 19, 1997 11:33:09 PM

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