Data for reference asbeck-electronlett-33-1230Piezoelectric charge densities in AlGaN/GaN HFETs
P.M. Asbeck, E.T. Yu, S.S. Lau, G.J. Sullivan, J. Van Hove, J. Redwing
Electronics Letters 33(14), 1230 (1997).
New estimates for the piezoelectric charge density at (0001) AlGaN/GaN
interfaces are provided.
This item is cited by the following items in the database:
- The Polarity of GaN: a Critical Review
- 300°ree;C GaN/AlGaN Heterojunction Bipolar Transistor
Contributed by S. Strite from internet-gateway-x.zurich.ibm.com. on Tuesday, July 8, 1997 8:58:19 AM
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