ping-electronlett-33-1081

Data for reference ping-electronlett-33-1081

Dependence of DC and RF characteristics on gate length for high current AlGaN/GaN HFETs

A. T. Ping, M. Asif Khan, Q. Chen, J. W. Yang, I. Adesida

Electronics Letters 33(12), 1081 (1997).

DC (Idmax, Gmext, and Vt) and RF (ft and fmax) investigated as function of gate length (0.25, 0.5, 0.7, and 1 um). 0.25 um gate-length device produced Idmax of 1 A/mm, Gmext of 152 mS/mm, ft of 37 GHz, and fmax of 81 GHz.

Contributed by A. T. Ping from escobar.ccsm.uiuc.edu. on Tuesday, July 15, 1997 3:10:27 PM

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