Data for reference ping-electronlett-32-68

Characterization of Pd Schottky barrier on n-type GaN

A.T. Ping, A.C. Schmitz, M.Asif Khan, I. Adesida

Electronics Letters 32(1), 68 (1996).

Schottky barrier of Pd to n-type GaN investigated and compared to Au.

This item cites the following items in the database:

  1. Reactive Ion Etching of Gallium Nitride Using Hydrogen Bromide Plasmas

Contributed by A. T. Ping from barnegat.ccsm.uiuc.edu. on Sunday, February 2, 1997 4:38:49 PM

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