Data for reference khan-electronlett-32-357

Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 cutoff frequency,

M. A. Khan, Q. Chen, M. S. Shur, B. T. Dermott, J. A. Higgins, J. Burm, W. Schaff, L. F. Eastman

Electronics Letters 32(4), 357 (1996).

This item is cited by the following items in the database:

  1. Research on GaN MODFET's
  2. The Growth of InGaN/(Al)GaN Quantum Well Structures in a Multi-Wafer High Speed Rotating Disk Reactor
  3. High Frequency AlGaN/GaN MODFET's

Contributed by A submitted manuscript, on Thursday, July 18, 1996 4:27:19 PM

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