Data for reference tews-electronlett-32-2004

Blue and green electroluminescence from MBE grown GaN/InGaN heterostructures

H. Tews, R. Averbeck, A. Graber, H. Riechert

Electronics Letters 32(21), 2004 (1996).

Fabrication of p-n junctions is reported for GaN/InGaN grown by molecular beam epitaxy using an RF plasma source. Peak electroluminescence was observed at 513 nm with an In mole fraction of .27 in the active layer and 470 nm for a device where the In mole fraction was 0.4.

This item cites the following items in the database:

  1. Characteristics of light-emitting diodes based on GaN p-n junctions grown by plasma-assisted molecular beam epitaxy
  2. Free and bound excitons in thin wurtzite GaN layers on sapphire

This item is cited by the following items in the database:

  1. Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy

Contributed by D.E. Crawford from macenroe.fysel.unit.no. on Thursday, February 20, 1997 10:25:31 AM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Wednesday, May 4, 2005 11:23:03 AM.
© 1998 The Materials Research Society