Data for reference schmitz-electronlett-32-1832

High temperature characteristics of Pd Schottky contacts on n-type GaN

A.C. Schmitz, A.T. Ping, M. Asif Khan, Q. Chen, J.W. Yang, I. Adesida

Electronics Letters 32(19), 1832 (1996).

This item cites the following items in the database:

  1. Reactive Ion Etching of Gallium Nitride Using Hydrogen Bromide Plasmas

Contributed by A. T. Ping from barnegat.ccsm.uiuc.edu. on Sunday, February 2, 1997 4:49:15 PM

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