Data for reference akasaki-electronlett-32-1105

Shortest wavelength semiconductor laser diode

I. Akasaki, S. Sota, H. Sakai, T. Tanaka, M. Koike, H. Amano

Electronics Letters 32(12), 1105 (1996).

A group III nitride based, separate confinement heterostructure (SCH) single quantum well (SQW) structure, with an active layer thickness as small as 1.5 nm, was fabricated. It shows the shortest lasing from semiconductor lasers by current injection at room temperature to date. Line width is as little as 0.15 nm.

This item is cited by the following items in the database:

  1. Characterization of InGaN MQW structures for blue semiconductor laser diodes
  2. Urbach-Martienssen tails in a wurtzite GaN epilayer
  3. Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC
  4. Transient four wave mixing experiments on GaN
  5. Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD
  6. Time-resolved photoluminescence studies of InGaN/GaN multiple quantum wells
  7. GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
  8. Defect structure in selectively grown GaN films with low threading dislocation density
  9. Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence
  10. On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect
  11. Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
  12. Visible-Blind UV Digital Camera Based On a 32 x 32 Array of GaN/AlGaN p-i-n Photodiodes
  13. UV-Specific (320-365 nm) Digital Camera Based On a 128x128 Focal Plane Array of GaN/AlGaN p-i-n Photodiodes

Contributed by Tohru HONDA from vcsel16.pi.titech.ac.jp. on Thursday, February 27, 1997 1:10:56 AM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Wednesday, April 27, 2005 4:43:17 PM.
© 1998 The Materials Research Society