pearton-electronlett-31-836

Data for reference pearton-electronlett-31-836

Hydrogen incorporation in GaN, AIN, and InN during Cl2/CH4/H2/Ar ECR plasma etching

S. J. Pearton, C. R. Abernathy, C. B. Vartuli, J. D. Mackenzie, R. J. Shul, R. G. Wilson, J. M. Zavada

Electronics Letters 31(10), 836 (1995).

Hydrogen concentrations up to similar to 10(20)cm(-3) in GaN and AIN and similar to 10(19)cm(-3) in InN are found to be incorporated during ECR plasma etching in Cl-2/CH4/H2Ar at 170 degrees C. Even very short duration (40s) etch treatments produce hydrogen incorporation depths greater than or equal to 0.2 mu m ahead of the etch front, and may lead to electrical passivation effects within this region. Post-etch annealing at 450-500 degrees C restores the initial conductivity.

Contributed by NASA's ADS database, with bibcode 1995ElL....31..836P

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