fritz-electronlett-31-68

Data for reference fritz-electronlett-31-68

AlN GaN Quarter Wave Reflector Stack Grown by Gas Source MBE on (100)GaAs

IJ Fritz, TJ Drummond

Electronics Letters 31(1), 68 (1995).

A 15 period, wurtzite-structure AlN-GaN reflector stack has been grown on (100) GaAs by gas-source molecular beam epitaxy. A peak reflectance of over 90% has been realised, in agreement with a matrix-method computer simulation. Our results support the feasibility of vertical Fabry-Perot cavity optoelectronics using nitride materials.

Contributed by E. Hellman

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