Data for reference li-electronlett-31-2127

High quality GaN growth at high growth rates by gas-source molecular beam epitaxy

LK Li, Z Yang, WI Wang

Electronics Letters 31(24), 2127 (1995).

High quality films of GaN were growth at rates of 1 micron per hour. Strong RHEED intensity oscillations were obseverd during growth.

This item is cited by the following items in the database:

  1. In Situ Control of GaN Growth by Molecular Beam Epitaxy
  2. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3
  3. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3

Contributed by Devin E. Crawford from mac35.ee.umn.edu. on Thursday, June 27, 1996 4:15:44 PM
Modified by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Saturday, January 18, 1997 9:38:27 AM

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